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Product information

  • Details: EPITAXIAL BASE HIGH GAIN DARLINGTON
  • Kollektor-Base-Spannung: 80 V
  • Kollektor-Emitter-Spannung: 80 V
  • Kollektorstrom: 8 A
  • Gesamtverlustleistung: 90 W
Properties "MJ1001 TO-3 TRANSISTOR NPN/DARLINGTON THT | ST Microelectronics"
Gehäuse: TO-3
Montageart: THT
Datasheet
MJ1001

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Manufacturer "ST Microelectronics"
STMicroelectronics GmbH

Bahnhofstrasse 18
85609 Aschheim-Dornach

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