Product information
- Details: EPITAXIAL BASE HIGH GAIN DARLINGTON
- Kollektor-Base-Spannung: 80 V
- Kollektor-Emitter-Spannung: 80 V
- Kollektorstrom: 8 A
- Gesamtverlustleistung: 90 W
Properties "MJ1001 TO-3 TRANSISTOR NPN/DARLINGTON THT | ST Microelectronics"
| Gehäuse: | TO-3 |
|---|---|
| Montageart: | THT |
Datasheet
Manufacturer "ST Microelectronics"
STMicroelectronics GmbH
Bahnhofstrasse 18
85609 Aschheim-Dornach
Bahnhofstrasse 18
85609 Aschheim-Dornach
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