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Product information

  • Details: N-channel silicon junction field-effect transistor
  • Drain-Source-Spannung: +/- 25 V
  • Gate-Source-Spannung: -3 - -7 V
  • Drainstrom: 60 - 140 mA
  • Gatestrom: 10 mA
  • max Verlustleistung @ Tamb = 50 °C: 400 mW
  • Ausgangskapazität: 5 pF
  • Sperrschichttemperatur: 150 °C
Properties "BF247B TO92 TRANSISTOR N-CHANNEL THT | NATIONAL"
Gehäuse: TO92
Montageart: THT
Datasheet
BF247B

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Manufacturer "NATIONAL"

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