Product information
- Details: N-channel silicon junction field-effect transistor
- Drain-Source-Spannung: +/- 25 V
- Gate-Source-Spannung: -3 - -7 V
- Drainstrom: 60 - 140 mA
- Gatestrom: 10 mA
- max Verlustleistung @ Tamb = 50 °C: 400 mW
- Ausgangskapazität: 5 pF
- Sperrschichttemperatur: 150 °C
Properties "BF247B TO92 TRANSISTOR N-CHANNEL THT | NATIONAL"
| Gehäuse: | TO92 |
|---|---|
| Montageart: | THT |
Datasheet
Manufacturer "NATIONAL"
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