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Product information

  • Drain-Source-Spannung: 800 V
  • Drainstrom: 5 A
  • Gate Fehlerstrom: +/-100 nA
  • max Verlustleistung: 125 W
  • Eingangskapazität: 2400 pF
  • Drain-Source-Durchlasswiderstand: 2 Ohm
Properties "2SK955 TO-3PN N-CHANNEL MOSFET THT | FUJI"
Gehäuse: TO-3PN
Montageart: THT
Datasheet
2SK955

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Manufacturer "FUJI"
Fuji Electric Europe GmbH

Goethering 58
63067 Offenbach am Main

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