Product information
- Drain-Source-Spannung: 800 V
- Drainstrom: 5 A
- Gate Fehlerstrom: +/-100 nA
- max Verlustleistung: 125 W
- Eingangskapazität: 2400 pF
- Drain-Source-Durchlasswiderstand: 2 Ohm
Properties "2SK955 TO-3PN N-CHANNEL MOSFET THT | FUJI"
| Gehäuse: | TO-3PN |
|---|---|
| Montageart: | THT |
Datasheet
Manufacturer "FUJI"
Fuji Electric Europe GmbH
Goethering 58
63067 Offenbach am Main
Goethering 58
63067 Offenbach am Main
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