Skip to main content Skip to search Skip to main navigation
Free shipping for orders over 150 €
Shipping within 24h
no minimum order value
secure payment
Hotline +49 2191/9740-0

Product information

  • Drain-Source-Spannung: 1000 V
  • Gate-Source-Spannung: +/-20 V
  • Drainstrom: 4 A
  • Gate Fehlerstrom: +/-100 nA
  • max Verlustleistung @ Tc = 25 °C: 100 W
  • Eingangskapazität: 700 pF
  • Drain-Source-Durchlasswiderstand: 3 Ohm
  • Betriebstemperatur: -55 - 150 °C
Properties "2SK1930 2-10S1B N-CHANNEL MOSFET THT | Toshiba Electronics"
Gehäuse: 2-10S1B
Montageart: THT
Datasheet
2SK1930

Oops! Your browser doesn't support PDFs!

Download "2SK1930" (882.38 KB)
Manufacturer "Toshiba Electronics"
Toshiba Electronics Europe GmbH

Hansaallee 181
40549 Düsseldorf

0 of 0 reviews

Average rating of 0 out of 5 stars

Leave a review!

Share your experiences with other customers.