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Product information

  • Details: SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
  • Drain-Source-Spannung: -250 V
  • Gate-Source-Spannung: +/- 30 V
  • Drainstrom: +/- 6 A
  • Gate-Leckstrom: - 100 µA
  • Verlustleistung @ Tc = 25 °C: 35 W
  • Verlustleistung @ Ta = 25 °C: 2 W
  • Betriebstemperatur: -55 - 150 °C
Properties "2SJ449 TO220 ISOLIERT P-CHANNEL MOSFET THT | NEC"
Gehäuse: TO220 ISOLIERT
Montageart: THT
Datasheet
2SJ449

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Manufacturer "NEC"
Renesas Electronics Germany GmbH

Grenzstraße 28
01109 Dresden

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