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Product information

  • Details: N-channel 800V - 3O - 3A Protected SuperMESH™ MOSFET
  • Drain-Source-Spannung: 800 V
  • Gate-Schwellenspannung: +/- 30 V
  • Dunkelstrom @Tc = 25 °C: 3 A
  • Einzelimpuls-Stoßentladungsenergie: 190 mJ
  • Gesamtverlustleistung @ Tc <= 25 °C: 80 W
  • Betriebstemperatur: -55 - 150 °C
Properties "STP4NK80Z TO220 N-CHANNEL POWER MOSFET THT | ST Microelectronics"
Gehäuse: TO220
Montageart: THT
Datasheet
STP4NK80Z

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Manufacturer "ST Microelectronics"
STMicroelectronics GmbH

Bahnhofstrasse 18
85609 Aschheim-Dornach

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