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| Quantity | price |
|---|---|
| To 99 |
€0.26
|
| To 499 |
€0.18
|
| To 999 |
€0.16
|
| To 2999 |
€0.15
|
| From 3000 |
€0.13
|
Content:
1 pieces
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Product number:
SI2308BDS-T1-GE3
MPN:
SI2308BDS-T1-GE3
MOQ:
20 piece(s)
MPU:
3000 pieces
RoHS:
conform
Legal guarantee of conformity
Product information
- max. Drain-Source-Spannung: 60 V
- max. Gate-Source-Spannung: +/-20 V
- max. Drain-Strom: 8 A
- Drain-Source-Einschaltwiderstand @Vgs=10 V: 0,156 Ohm
- Verlustleistung @Tc=25 °C: 1,66 W
- Betriebstemperatur: -55 - 150 °C
Properties "SI2308BDS-T1-GE3 SOT23 N-CHANNEL 60 V MOSFET SMT | Vishay"
| Gehäuse: | SOT23 |
|---|---|
| Montageart: | SMT |
Datasheet
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