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Product information

  • max. Drain-Source-Spannung: 60 V
  • max. Gate-Source-Spannung: +/-20 V
  • max. Drain-Strom: 8 A
  • Drain-Source-Einschaltwiderstand @Vgs=10 V: 0,156 Ohm
  • Verlustleistung @Tc=25 °C: 1,66 W
  • Betriebstemperatur: -55 - 150 °C
Properties "SI2308BDS-T1-GE3 SOT23 N-CHANNEL 60 V MOSFET SMT | Vishay"
Gehäuse: SOT23
Montageart: SMT
Datasheet
SI2308BDS-T1-GE3

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Manufacturer "Vishay"
Vishay Semiconductor GmbH

Theresienstraße 2
74072 Heilbronn

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