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Product information

  • Drain-Source-Spannung: -50 V
  • Gate-Source-Spannung: +/- 20 V
  • Drainstrom: -8 A
  • max Verlustleistung @ Tc = 25 °C: 48 W
  • Drain-Source-Durchlasswiderstand: 0,3 Ohm
  • Betriebstemperatur: -55 - 175 °C
Properties "RFP8P05 TO220 P-CHANNEL MOSFET THT | Harris Semiconductor"
Gehäuse: TO220
Montageart: THT
Datasheet
RFP8P05

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Manufacturer "Harris Semiconductor"

Harris Corporation

Verantwortliche Person für die EU
In der EU ansässiger Wirtschaftsbeteiligter, der sicherstellt, dass das Produkt den erforderlichen Vorschriften entspricht:

MEPATRONIK GmbH
Greulingstr. 10-12
42859 Remscheid

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