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Product information

  • Drain-Source-Durchbruchspannung: -100 V
  • Drain-Source-Widerstand im eingeschalteten Zustand: 1,2 Ohm
  • Drainstrom: -4 A
  • Verlustleistung @Tc=25 °C: 43 W
  • Betriebstemperatur: -55 °C - 175 °C
  • Einschalt-Verzögerungszeit: 10 nS
  • Eingangskapazität: 200 pF
  • Ausgangskapazität: 94 pF
Properties "IRF9510PBF TO220 P-CHANNEL POWER MOSFET THT | Vishay"
Gehäuse: TO220
Montageart: THT
Datasheet
IRF9510PBF

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Manufacturer "Vishay"
Vishay Semiconductor GmbH

Theresienstraße 2
74072 Heilbronn

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