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Product information

  • Drain-Source-Spannung: 500 V
  • Gate-Source-Spannung: +/- 20 V
  • Drain-Strom: 2,5 A
  • Drain-Strom (pulsierend): 8 A
  • Avalanche-Strom (sich wiederholend): 2,5 A
  • Verlustleistung @ Tc = 25°C: 50 W
  • Drain-Source-Durchlasswiderstand: 3 Ohm
  • Betriebstemperatur: -55 - 150°C
Properties "IRF820PBF TO220 N-CHANNEL POWER MOSFET THT | Vishay"
Gehäuse: TO220
Montageart: THT
Datasheet
IRF820PBF

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Manufacturer "Vishay"
Vishay Semiconductor GmbH

Theresienstraße 2
74072 Heilbronn

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