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Product information

  • Drain-Source-Spannung: 200 V
  • Gate-Source-Spannung: +/- 20 V
  • Drain-Strom: 5 A
  • Drain-Strom (pulsierend): 20 A
  • Avalanche-Strom (sich wiederholend): -
  • Verlustleistung @ Tc = 25°C: 40 W
  • Drain-Source-Durchlasswiderstand: 0,5 Ohm
  • Betriebstemperatur: -55 - 150°C
Properties "IRF620 TO220 N-CHANNEL POWER MOSFET THT | Harris Semiconductor"
Gehäuse: TO220
Montageart: THT
Datasheet
IRF620

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