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Product information

  • Drain-Source-Spannung: 100 V
  • Gate-Source-Spannung: +/- 20 V
  • Drain-Strom: 33 A
  • Drain-Strom (pulsierend): 110 A
  • Avalanche-Strom (sich wiederholend): 16 A
  • Verlustleistung @ Tc = 25°C: 130 W
  • Drain-Source-Durchlasswiderstand: 44 mOhm
  • Betriebstemperatur: -55 - 175°C
Properties "IRF540NPBF TO220 N-CHANNEL HEXFET POWER MOSFET THT | Infineon"
Gehäuse: TO220
Montageart: THT
Datasheet
IRF540NPBF

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Manufacturer "Infineon"
Infineon Technologies AG

Am Campeon 1-15
85579 Neubiberg

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