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Product information

  • Drain-Source-Spannung: 100 V
  • Gate-Source-Spannung: +/- 20 V
  • Drain-Strom: 9,7 A
  • Drain-Strom (pulsierend): 38 A
  • Avalanche-Strom (sich wiederholend): 5,7 A
  • Verlustleistung @ Tc = 25°C: 48 W
  • Drain-Source-Durchlasswiderstand: 0,2 Ohm
  • Betriebstemperatur: -55 - 175°C
Properties "IRF520NPBF TO220 N-CHANNEL HEXFET POWER MOSFET THT | Infineon"
Gehäuse: TO220
Montageart: THT
Datasheet
IRF520NPBF

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Manufacturer "Infineon"
Infineon Technologies AG

Am Campeon 1-15
85579 Neubiberg

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