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Product information

  • Drain-Source-Spannung: 200 V
  • Gate-Source-Spannung: +/- 20 V
  • Drainstrom: 9,5 A
  • max Verlustleistung @ Tc = 25 °C: 75 W
  • Ausgangskapazität: 85 pF
  • Drain-Source-Durchlasswiderstand: 0,4 Ohm
  • Betriebstemperatur: -55 - 150 °C
Properties "BUZ32 TO220 N-CHANNEL MOSFET THT | Siemens"
Gehäuse: TO220
Montageart: THT
Datasheet
BUZ32

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Manufacturer "Siemens"
Siemens Aktiengesellschaft

Werner-von-Siemens-Straße 1
80333 München

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