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Product information

  • Drain-Gate-Spannung: 50 V
  • Drain-Source-Spannung: 50 V
  • Gate-Source-Spannung: +/- 20 V
  • Dunkelstrom: 30 A
  • Verlustleistung: 75 W
  • Betriebstemperatur: -55 - 150 °C
Properties "BUZ11_NR4941 TO220 N-CHANNEL MOSFET THT | ONSEMI"
Gehäuse: TO220
Montageart: THT
Datasheet
BUZ11_NR4941

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Manufacturer "ONSEMI"
ON Semiconductor Germany GmbH

Einsteinring 28
85609 Aschheim

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