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Product information

  • Drain-Source-Spannung: 500 V
  • Gate-Source-Spannung: +/-20 V
  • Drainstrom: +/-10 A
  • Gate Fehlerstrom: +/-100 nA
  • max Verlustleistung @ Ta = 25 °C: 3 W
  • Eingangskapazität: 1270 pF
  • Drain-Source-Durchlasswiderstand: 0,7 Ohm
  • Betriebstemperatur: -55 - 150 °C
Properties "2SK819 TO-3PN N-CHANNEL MOSFET THT | NEC"
Gehäuse: TO-3PN
Montageart: THT
Datasheet
2SK819

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Manufacturer "NEC"
Renesas Electronics Germany GmbH

Grenzstraße 28
01109 Dresden

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