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Product information

  • Drain-Source-Spannung: 500 V
  • Gate-Source-Spannung: +/-20 V
  • Drainstrom: 12 A
  • Gate Fehlerstrom: +/-10 µA
  • max Verlustleistung @ Tc = 25 °C: 100 W
  • Eingangskapazität: 2050 pF
  • Drain-Source-Durchlasswiderstand: 0,45 Ohm
  • Betriebstemperatur: -55 - 150 °C
Properties "2SK683 TO-3P N-CHANNEL MOSFET THT | FUJI"
Gehäuse: TO-3P
Montageart: THT
Datasheet
2SK683

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Manufacturer "FUJI"
Fuji Electric Europe GmbH

Goethering 58
63067 Offenbach am Main

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