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Product information

  • Drain-Source-Spannung: 250 V
  • Gate-Source-Spannung: +/-20 V
  • Drainstrom: 10 A
  • Gate Fehlerstrom: +/-100 nA
  • max Verlustleistung @ Ta = 25 °C: 2 W
  • Eingangskapazität: 660 pF
  • Drain-Source-Durchlasswiderstand: 0,4 Ohm
  • Betriebstemperatur: -55 - 150 °C
Properties "2SK526 TO-220FA N-CHANNEL MOSFET THT | Toshiba Electronics"
Gehäuse: TO-220FA
Montageart: THT
Datasheet
2SK526

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Manufacturer "Toshiba Electronics"
Toshiba Electronics Europe GmbH

Hansaallee 181
40549 Düsseldorf

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