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Product information

  • Drain-Source-Spannung: 60 V
  • Gate-Source-Spannung: +/-20 V
  • Drainstrom: 40 A
  • Gate Fehlerstrom: +/-100 nA
  • max Verlustleistung @ Tc = 25 °C: 50 W
  • Eingangskapazität: 1500 pF
  • Drain-Source-Durchlasswiderstand: 15 mOhm
  • Betriebstemperatur: -55 - 150 °C
Properties "2SK2800 TO220 N-CHANNEL MOSFET THT | HITACHI"
Gehäuse: TO220
Montageart: THT
Datasheet
2SK2800

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Manufacturer "HITACHI"
Hitachi High-Tech Europe GmbH

Europark Fichtenhain A 12
47807 Krefeld

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