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Product information

  • Drain-Source-Spannung: 600 V
  • Gate-Source-Spannung: +/-20 V
  • Drainstrom: 10 A
  • Gate Fehlerstrom: +/-10 µA
  • max Verlustleistung: 25 W
  • Eingangskapazität: 700 pF
  • Drain-Source-Durchlasswiderstand: 0,1 Ohm
Properties "2SK2281 TO251 N-CHANNEL MOSFET THT | SHINDENGEN"
Gehäuse: TO251
Montageart: THT
Datasheet
2SK2281

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Manufacturer "SHINDENGEN"
Shindengen Europe GmbH

Prinzenallee 1
40549 Düsseldorf

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