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Product information

  • Drain-Source-Spannung: 800 V
  • Gate-Source-Spannung: +/-30 V
  • Drainstrom: 9 A
  • Gate Fehlerstrom: +/-100 nA
  • max Verlustleistung @ Tc = 25 °C: 150 W
  • Eingangskapazität: 1150 pF
  • Drain-Source-Durchlasswiderstand: 1 Ohm
  • Betriebstemperatur: -55 - 150 °C
Properties "2SK2078 TO-3P N-CHANNEL MOSFET THT | Toshiba Electronics"
Gehäuse: TO-3P
Montageart: THT
Datasheet
2SK2078

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Manufacturer "Toshiba Electronics"
Toshiba Electronics Europe GmbH

Hansaallee 181
40549 Düsseldorf

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