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Product information

  • Drain-Source-Spannung: 1000 V
  • Gate-Source-Spannung: +/-30 V
  • Drainstrom: 5 A
  • Gate Fehlerstrom: +/-10 µA
  • Verlustleistung @ Tc = 25 °C: 100 W
  • Eingangskapazität: 1700 pF
  • Drain-Source-Durchlasswiderstand: 1,5 Ohm
  • Betriebstemperatur: -55 - 150 °C
Properties "2SK1773 TO-3P N-CHANNEL MOSFET THT | HITACHI"
Gehäuse: TO-3P
Montageart: THT
Datasheet
2SK1773

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Manufacturer "HITACHI"
Hitachi High-Tech Europe GmbH

Europark Fichtenhain A 12
47807 Krefeld

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