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Product information

  • Details: High Speed, High Current DC-DC Converter
  • Gate-Drain-Spannung: 600 V
  • Drain-Source-Spannung: 600 V
  • Gate-Source-Spannung: +/- 30 V
  • Drainstrom: 6 A
  • Gate-Leckstrom: +/- 100 nA
  • Verlustleistung @ Tc = 25 °C: 25 W
  • Betriebstemperatur: -55 - 150 °C
Properties "2SK1118 TO220 ISOLIERT N-CHANNEL MOSFET THT | Toshiba Electronics"
Gehäuse: TO220 ISOLIERT
Montageart: THT
Datasheet
2SK1118

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Manufacturer "Toshiba Electronics"
Toshiba Electronics Europe GmbH

Hansaallee 181
40549 Düsseldorf

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