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Product information

  • Details: HF amplification
  • Gate-Drain-Spannung: 30 V
  • Drainstrom: 20 mA
  • Gate-Leckstrom: -10 nA
  • Verlustleistung @ Ta = 25 °C: 250 mW
  • Betriebstemperatur: -55 - 125 °C
Properties "2SK104 TO92 SILICON N-CHANNEL MOSFET THT | NEC"
Gehäuse: TO92
Montageart: THT
Datasheet
2SK104

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Manufacturer "NEC"
Renesas Electronics Germany GmbH

Grenzstraße 28
01109 Dresden

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