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Product information

  • Drain-Source-Spannung: 450 V
  • Gate-Source-Spitzenspannung: +/-30 V
  • Drainstrom: 5 A
  • Gate Fehlerstrom: 10 nA
  • max Verlustleistung @ Tc = 25 °C: 40 W
  • Eingangskapazität: 500 pF
  • Drain-Source-Durchlasswiderstand: 1,1 Ohm
  • Betriebstemperatur: -55 - 150 °C
Properties "2SK1006 TO-3PN N-CHANNEL MOSFET THT | FUJI"
Gehäuse: TO-3PN
Montageart: THT
Datasheet
2SK1006

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Manufacturer "FUJI"
Fuji Electric Europe GmbH

Goethering 58
63067 Offenbach am Main

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