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Product information

  • Details: Ultrahigh-Speed Switching Applications
  • Drain-Source-Spannung: -250 V
  • Gate-Source-Spannung: +/- 30 V
  • Drainstrom: -3 A
  • Gate-Leckstrom: - 10 µA
  • Verlustleistung @ Tc = 25 °C: 25 W
  • Verlustleistung @ Ta = 25 °C: 2 W
  • Betriebstemperatur: -55 - 150 °C
Properties "2SJ306 TO220 ISOLIERT SILICON P-CHANNEL MOSFET THT | SANYO"
Gehäuse: TO220 ISOLIERT
Montageart: THT
Datasheet
2SJ306

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